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| MITSUBISHI TRANSISTOR MODULES QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE QM600HD-M * * * * IC Collector current ........................ 600A VCEX Collector-emitter voltage ........... 350V hFE DC current gain............................. 500 Non-Insulated Type APPLICATION Robotics, Forklifts, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 94 80 5.5 C B 20 E E 48 22 62 8 B 14 BX 12 17 E E BX 22 25 M4 64 M6 8 5.5 21 LABEL 25 27 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 350 350 400 10 600 -- 2080 15 -- -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M6 -- 1.96~2.94 20~30 1.47~1.96 15~20 0.98~1.47 10~15 0.98~1.47 10~15 420 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm N*m kg*cm N*m kg*cm g Mounting screw M5 -- Mounting torque B(E) terminal screw M4 BX terminal screw M4 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=350V, VEB=2V VCB=400V, Emitter open VEB=10V IC=600A, IB=1.2A -IC=600A (diode forward voltage) IC=600A, VCE=2V Min. -- -- -- -- -- -- 500 -- VCC=200V, IC=600A, IB1=2A, -IB2=4A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 2.0 800 2.0 2.5 -- -- 3.0 15 3.0 0.06 -- 0.05 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 1000 Tj=25C 10 4 7 5 4 3 2 10 3 7 5 4 3 2 10 2 10 1 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT IC (A) 1.0A 0.4A 600 0.2A 400 0.08A DC CURRENT GAIN hFE 800 IB=2.0A 200 VCE=2.0V Tj=25C Tj=125C 0 0 1 2 3 4 5 2 3 45 710 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 0 7 5 4 3 2 10 -1 7 5 4 3 2 10 -2 1.2 1.4 1.6 1.8 2.0 2.2 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 10 1 BASE CURRENT IB (A) VCE=2.0V Tj=25C VBE(sat) SATURATION VOLTAGE VCE(sat) IB=1.2A Tj=25C Tj=125C 2 3 4 5 7 10 2 2 3 4 5 7 10 3 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 Tj=25C Tj=125C SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 10 2 7 5 3 2 10 1 ts 7 5 3 2 ton, ts, tf (s) 4 VCC=200V IB1=2.0A -IB2=4.0A 3 IC=600A 2 SWITCHING TIME tf 1 IC=200A IC=400A 0 10 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 10 0 Tj=25C ton 7 Tj=125C 5 3 2 10 -1 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 2 3 4 5 7 10 4 BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 3 2 ts, tf (s) ts 10 1 7 5 4 3 2 10 0 7 5 4 3 VCC=200V IB1=2A IC=600A Tj=25C Tj=125C 3 4 5 7 10 0 2 3 4 5 7 10 1 23 REVERSE BIAS SAFE OPERATING AREA 2000 COLLECTOR CURRENT IC (A) 1800 1600 1400 1200 1000 800 600 400 200 0 0 100 200 300 400 500 VCE (V) -IB2=4A 6A Tj=125C SWITCHING TIME tf BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE FORWARD BIAS SAFE OPERATING AREA 10 4 7 5 3 2 10 3 7 5 3 2 10 2 7 5 3 2 TC =25C NON-REPETITIVE 100 90 tw=100s DERATING FACTOR (%) 80 70 60 50 40 30 20 10 0 DERATING FACTOR OF F. B. S. O. A. COLLECTOR CURRENT IC (A) SECOND BREAKDOWN AREA s 1m s m VCE (V) 10 COLLECTOR DISSIPATION 10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 7 10 1 2 3 0.08 0.07 0.06 Zth (j-c) (C/ W) 0.05 0.04 0.03 0.02 0.01 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 TIME (s) D C 0 20 40 60 80 100 120 140 160 TC (C) CASE TEMPERATURE Feb.1999 |
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